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Samsung announces MRAM-embedded FDSOI at 28nm

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21/07/2016

Samsung Foundry is going to offer both spin torque transfer magnetic RAM (STT-MRAM) and flash as embedded non-volatile memory options on its 28nm FDSOI manufacturing process.

News suggested by: L. Prejbeanu (SPINTEC, Grenoble, France)

More information: analog-eetimes.com

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