Research Scientist on MTJ based devices (MRAM, sensors)

SPINTEC is opening a Research Scientist position in the field of magnetic tunnel junctions spintronics devices, namely MRAM and magnetic sensors. Research will be conducted in the MRAM and Magnetic Sensors team, while also fostering partnerships and collaborations at both the French and European levels, as well as with industry. We are seeking candidates with a strong foundation in spintronics, with a particular emphasis on magnetic memories and sensors. The ideal candidate should possess a PhD and have substantial research experience in the development of magnetic tunnel junctions (MTJs) for applications such as magnetic sensors and magnetoresistive random access memories (MRAM). This experience should encompass design and optimization of material stacks, experimental characterization, and performance measurement of devices. The candidate should have experience in one or more of the following areas: * Development of novel magnetic materials or innovative concepts for spintronic applications * An industrial setting or familiarity with industrial requirements, particularly in the domains of magnetic memories (MRAM) and/or magnetic sensors * Modeling and simulation of the dynamic switching of MRAMs with STT/SOT, or the quasi-static behavior for sensor applications * Supervision and mentorship of students and young scientists, project management