Postdoc: Advancing Spin-Orbit Torque based Magnetic Tunnel Junctions (TOPMEMO)

Join our team for a postdoctoral position focused on advancing Spin-Orbit Torque (SOT) based Magnetic Tunnel Junctions (MTJ) for embedded non-volatile memory applications. SOT-MTJs offer compelling advantages similar to SRAM, including ultra-fast dynamics (sub-ns), exception-al endurance (>1014 cycles), and low power operation (sub-pJ). A critical challenge in SOT-MRAM technology is reducing the write current, which is intrinsically linked to the charge-to-spin current conversion ratio (), a key parameter defining the efficiency of SOT materials. The TopMemo project aims to leverage recently discovered topological insulators (TIs), which exhibit significantly larger SOT compared to conventional metals like Pt, Ta, or W. By replacing heavy metals with TIs in these structures, we seek to substantially reduce the writing current. This project will utilize the expertise of LAAS-CNRS in growing TIs via Molecular Beam Epitaxy (MBE) on industrial substrates, and of CEA-Spintec in the characterization and fabrication of spintronic devices. In this role, you will investigate how various spacer layers can maintain the integrity of the TI and the ferromagnetic storage layer during annealing. Additionally, you will explore the poten-tial of orbital physics to introduce an extra degree of freedom for material engineering in TI/FM stacks. The most promising solutions will be integrated into scaled SOT-MTJ devices.