29/09/2017
Forum on MRAM bringing together experts from industry and academia will be held one day after 2017 IEEE International Electron Devices Meeting.
The one-day forum is organized the day following IEDM (i.e on 7 December 2017, 8:45am - 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O'Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 9th edition of the series.