Everspin demonstrated its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory at the Flash Memory Summit in Santa Clara on August 7-10.
The 1Gb MRAM (DDR4 compatible) is produced in 28nm CMOS on 300mm wafers in partnership with GLOBALFOUNDRIES, utilizing perpendicular magnetic tunnel junction technology. This latest STT-RAM product provides 4 times the capacity of Everspin’s current 256Mb DDR3 ST-MRAM. Everspin has begun sampling with lead customers.
Further information can be found here. Basic info about the Everspin MRAM: https://www.everspin.com/spin-torque-mram-technology