Location : Grenoble, France
Yearly income : 24 k€
The scalability of single Magnetic Random Access Memory (MRAM) cells below 10nm lateral size has been demonstrated in the lab recently, independently at SPINTEC and at Tohoku university. The purpose of the PhD project is to pave the way towards integration of this concept in a viable technological process, compatible with high areal density and mass production.
The principle relies on filling semiconductor vertical interconnects with a magnetic material, to be used as a storage cell. The first steps will consist in the structural, magnetic and electric characterization of such interconnects. This will then be extended to a designing and investigating a fully functional memory cell, addressing both fundamental and technological challenges.
Applicants must have a taste for experimental physics and collaborative work, display understanding of condensed matter physics and have computer skills.
Application and further information
If you are interested in this topic, please contact Lucian PREJBEANU (email@example.com) or Olivier FRUCHART (firstname.lastname@example.org) at SPINTEC. Applications must include a CV, motivation and recommendation letters. The position start in October 2019.
Further information: http://www.spintec.fr/phd-position-exploring-the-scalability-of-spintronics-for-3d-devices/